Semiconductor Device, Method and Machine of Manufacture

ABSTRACT

A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.16/509,775, filed on Jul. 12, 2019, which claims the benefit of U.S.Provisional Patent Application No. 62/737,358, entitled “SemiconductorDevice, Method and Machine of Manufacture,” filed on Sep. 27, 2018,which applications are hereby incorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography and etching processes to form circuit components andelements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise withineach of the processes that are used, and these additional problemsshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a formation of a first opening in a first dielectriclayer, in accordance with some embodiments.

FIGS. 2A-2C illustrate deposition of a first layer of a material withinthe first opening in accordance with some embodiments.

FIGS. 3A-3B illustrate deposition of a second layer of the materialwithin the first opening in accordance with some embodiments.

FIG. 4 illustrates formation of an interconnect within the first openingin accordance with some embodiments.

FIGS. 5A-5B illustrate configurations motors connected to a first coiland a mounting platform in accordance with some embodiments.

FIG. 6 illustrates multiple coils in accordance with some embodiments.

FIGS. 7A-7B illustrate a deposition of an atomic layer deposition layerin accordance with some embodiments.

FIGS. 8A-8B illustrate formation of an interconnect within the firstopening in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments will be described below with respect to a deposition processto form a barrier layer within an interconnect structure of asemiconductor device. Embodiments, however, may be used in a widevariety of ways, and are not intended to be limited to the embodimentsdescribed herein.

With reference now to FIG. 1, FIG. 1 illustrates a substrate 101 withactive devices (not separately illustrated), metallization layers 103over the substrate 101, conductive elements 105 within the metallizationlayers 103, an optional first etch stop layer 107, an optional secondetch stop layer 109, and a first dielectric layer 111. In an embodimentthe substrate 101 may comprise bulk silicon, doped or undoped, or anactive layer of a silicon-on-insulator (SOI) substrate. Generally, anSOI substrate comprises a layer of a semiconductor material such assilicon, germanium, silicon germanium, SOI, silicon germanium oninsulator (SGOI), or combinations thereof. Other substrates that may beused include multi-layered substrates, gradient substrates, or hybridorientation substrates.

The active devices may comprise a wide variety of active devices such astransistors and the like and passive devices such as capacitors,resistors, inductors and the like that may be used to generate thedesired structural and functional parts of the design. The activedevices and passive devices may be formed using any suitable methodseither within or else on the substrate 101.

The metallization layers 103 are formed over the substrate 101 and theactive devices and are designed to connect the various active devices toform functional circuitry for the design. In an embodiment themetallization layers are formed of alternating layers of dielectric andconductive material and may be formed through any suitable process (suchas deposition, damascene, dual damascene, etc.). In an embodiment theremay be one to twelve layers of metallization separated from thesubstrate 101 by at least one interlayer dielectric layer (ILD), but theprecise number of metallization layers is dependent upon the design.

The conductive elements 105 may be formed in an upper portion of themetallization layers 103, and is a region to which an interconnect 401(not illustrated in FIG. 1 but illustrated and described below withrespect to FIG. 4) will make physical and electrical connection. In anembodiment the conductive elements 105 may be a material such as copperformed using, e.g., a damascene or dual damascene process, whereby anopening is formed within an upper portion of the metallization layers103, the opening is filled and/or overfilled with a conductive materialsuch as copper, and a planarization process is performed to embed theconductive material within the metallization layers 103. However, anysuitable material and any suitable process may be used to form theconductive elements 105.

A first etch stop layer 107 is used to protect the underlying structuresand provide a control point for a subsequent etching process through,e.g., the second etch stop layer 109. In one embodiment, the first etchstop layer 107 may be formed of silicon oxide, silicon nitride, siliconcarbon nitride (SiCN), silicon carbon oxide (SiCO), or a metal oxide ornitride such as aluminum oxide (AlO_(x)), AlN_(x), AlO_(x)N_(y),TiO_(x), TiO_(x)N_(y), ZnO_(x), MnO_(x), combinations of these, or thelike. The first etch stop layer 107 may be formed using plasma enhancedchemical vapor deposition (PECVD), plasma enhanced atomic layerdeposition (PEALD), thermal atomic layer deposition, or physical vapordeposition process. The first etch stop layer 107 may have a thicknessof between about 5 Å and about 100 Å, such as about 30 Å.

Once the first etch stop layer 107 has been formed to cover theconductive elements 105, the second etch stop layer 109 is formed overthe first etch stop layer 107 to protect the underlying structures andprovide a control point for a subsequent etching process through, e.g.,the first dielectric layer 111. In one embodiment, the second etch stoplayer 109 may be formed of silicon oxide, silicon nitride, siliconcarbon nitride (SiCN), silicon carbon oxide (SiCO), or a metal oxide ornitride such as aluminum oxide (AlO_(x)), AlN_(x), AlO_(x)N_(y),TiO_(x), TiO_(x)N_(y), ZnO_(x), MnO_(x), combinations of these, or thelike. The second etch stop layer 109 may be formed using plasma enhancedchemical vapor deposition (PECVD), plasma enhanced atomic layerdeposition (PEALD), thermal atomic layer deposition, or physical vapordeposition process. The second etch stop layer 109 may have a thicknessof between about 25 Å and about 100 Å, such as about 40 Å.

Once the second etch stop layer 109 has been formed, the firstdielectric layer 111 may be formed in order to help isolate theinterconnect 401 from other adjacent electrical routing lines. In anembodiment the first dielectric layer 111 may be, e.g., a low-kdielectric film intended to help isolate the interconnect 401 from otherstructures, such as a porous material such as SiOCN, SiCN, SiOC,combinations of these, or the like. The first dielectric layer 111 maybe formed by first depositing a matrix material along with a porogen andthen removing the porogen in order to form pores within the matrixmaterial. However, any suitable material or method of manufacture may beutilized.

FIG. 1 additionally illustrates a patterning of the first dielectriclayer 111, the second etch stop layer 109, and the first etch stop layer107 to form a first opening 113 with, e.g., a trench portion 115 and avia portion 117. In an embodiment the first opening 113 may be formedusing either a via-first or a via-last patterning process, whereby aseries of two or more photoresists (which may be, e.g., tri-layerphotoresists which include a bottom anti-reflective coating, a middlelayer hard mask, and a photosensitive material) are placed over thefirst dielectric layer 111 and patterned, and then the patterns aretransferred to the first dielectric layer 111, the second etch stoplayer 109 (when present), and the first etch stop layer 107 (whenpresent) through a series of one or more anisotropic etches, such as oneor more reactive ion etches. However, any suitable methods, such asdouble patterning methods, may be utilized to pattern the firstdielectric layer 111, the second etch stop layer 109, and the first etchstop layer 107 and form the first opening 113.

FIGS. 2A-2C illustrate that, once the first opening 113 has been formedthrough the first dielectric layer 111, the substrate 101 (and, hence,the first dielectric layer 111 with the first opening 113) may be placedwithin a deposition system 200 to form a barrier layer 301 (notseparately illustrated in FIGS. 2A-2C but illustrated and describedbelow with respect to FIG. 3) which covers the sidewalls of the firstopening 113. In an embodiment the deposition system 200 comprises adeposition chamber 201, a mounting platform 203, a target 205, a firstpower source 207, a second power source 209, electromagnets 224, amagnetron 211, a first coil 213, a first precursor delivery system 215,and a first ion delivery system 216.

The deposition chamber 201 receives the substrate 101 (and, hence, thefirst dielectric layer 111 with the first opening 113) and contains theprecursor and process materials during the deposition process. Thedeposition chamber 201 may be any desired shape that may be suitable fordispersing the materials and contacting the materials with the firstdielectric layer 111. In the embodiment illustrated in FIG. 2A, thedeposition chamber 201 has a cylindrical sidewall and a bottom. However,the deposition chamber 201 is not limited to a cylindrical shape, andany other suitable shape, such as a hollow square tube, an octagonalshape, or the like, may be utilized. Furthermore, the deposition chamber201 may be surrounded by a housing 226 made of material that is inert tothe various process materials. As such, while the housing 226 may be anysuitable material that can withstand the chemistries and pressuresinvolved in the deposition process, in an embodiment the housing 226 maybe steel, stainless steel, nickel, aluminum, alloys of these,combinations of these, and like.

Within the deposition chamber 201 the substrate 101 may be placed on amounting platform 203 in order to position and control the substrate 101and the first opening 113 during the deposition processes. The mountingplatform 203 may be, e.g., an electrostatic chuck, which provideselectrostatic charges to clamp the substrate 101 to the mountingplatform 203 without mechanical fasteners. The mounting platform 203 mayalso include heating mechanisms in order to heat the substrate 101during the deposition processes. However, any suitable method of holdingthe substrate 101 may be utilized. Furthermore, while a single mountingplatform 203 is illustrated in FIG. 2A, any number of mounting platforms203 may additionally be included within the deposition chamber 201.

Additionally, the deposition chamber 201 and the mounting platform 203may be part of a cluster tool system (not shown). The cluster toolsystem may be used in conjunction with an automated handling system inorder to position and place the substrate 101 into the depositionchamber 201 prior to the deposition processes, position and hold thesubstrate 101 during the deposition processes, and remove the substrate101 from the deposition chamber 201 after the deposition processes.

On an opposite side of the deposition chamber, the target 205 may beplaced into a target region such that the substrate 101 faces the target205 while the substrate 101 is located on the mounting platform 203. Thetarget 205 comprises a material that is either desired to be depositedonto the substrate 101 (e.g., within the first opening 113) or elsecomprises a material that is a precursor material to the material thatis desired to be deposited onto the substrate 101. As such, while thematerial of the target 205 is dependent at least in part on the materialthat is desired to be deposited, in an embodiment in which the barrierlayer 301 is tantalum nitride, the target 205 comprises a precursormaterial such as tantalum. However, any suitable material may beutilized.

Additionally, in an embodiment in which the target 205 provides one ormore, but not all, of the precursors desired to be deposited, a firstprecursor delivery system 215 may also be provided in order to supply anon-target precursor to the deposition chamber 201 while a first iondelivery system 216 may be provided in order to supply an ion source forthe sputtering process. In an embodiment the first precursor deliverysystem 215 and the first ion delivery system 216 may each include a gassupply 217 and a flow controller 219. In an embodiment in which thenon-target precursor and the ion source are stored in a gaseous state,the gas supply 217 may be a vessel, such as a gas storage tank, that islocated either locally to the deposition chamber 201 or else may belocated remotely from the deposition chamber 201. Alternatively, the gassupply 217 may be a facility that independently prepares and deliversthe non-target precursor and the ion source to the flow controller 219.Any suitable source for the non-target precursor and the ion source maybe utilized as the gas supply 217, and all such sources are fullyintended to be included within the scope of the embodiments.

The gas supply 217 may supply the desired non-target precursor and theion source to their respective flow controllers 219. The flowcontrollers 219 may be utilized to control the flow of the non-targetprecursor and the ion source to the deposition chamber 201, thereby alsohelping to control the pressure within the deposition chamber 201. Inone embodiment the desired non-target precursor and the ion source maybe directed to enter the deposition chamber 201 through a sidewall(e.g., at a top, middle, or bottom of the sidewalls) of the depositionchamber 201 or else through the bottom or top of the deposition chamber201. However, any suitable location of entry may be utilized.

The flow controllers 219 may be, e.g., a proportional valve, amodulating valve, a needle valve, a pressure regulator, a mass flowcontroller, combinations of these, or the like. However, any suitablemethod for controlling and regulating the flow of the non-targetprecursor and the ion source to the deposition chamber 201 may beutilized, and all such components and methods are fully intended to beincluded within the scope of the embodiments.

Additionally, in an embodiment in which the non-target precursor or theion source is stored in a solid or liquid state, the gas supply 217 maystore a carrier gas and the carrier gas may be introduced into aprecursor canister (not separately illustrated), which stores thenon-target precursor and the ion source in the solid or liquid state.The carrier gas is then used to push and carry the non-target precursoras it either evaporates or sublimates into a gaseous section of theprecursor canister before being sent to the deposition chamber 201. Anysuitable method and combination of units may be utilized to provide thenon-target precursor and the ion source, and all such combinations ofunits are fully intended to be included within the scope of theembodiments.

In an embodiment the ion source is chosen so as to be able to impingeupon the target 205 and dislodge or otherwise remove portions of thetarget 205 without otherwise reacting with the material of the target205 or other by-products that may occur. As such, while the precisesource of ions may be dependent at least in part upon the materialschosen, in an embodiment in which tantalum nitride is being depositedwith a tantalum target, the ion source may be an inert gas such asargon. However, any suitable source of ions may be utilized.

The non-target precursor is chosen so as to react with the precursorfrom the target 205 in order to form the material that is desired to bedeposited. As such, the precise material chosen for the non-targetprecursor is dependent at least in part upon the material desired to bedeposited as well as the material chosen for the target 205. However, inan embodiment in which the material to be deposited is tantalum nitrideand the target 205 is tantalum, the non-target precursor may be amaterial such as nitrogen (N₂). However, any suitable material may bechosen for the non-target precursor.

On an opposite side of the target 205 from the mounting platform 203, amagnetron 211 may be formed in order to help generate a magnetic fieldwithin the deposition chamber 201 and help generate a high-densityplasma region within the deposition chamber 201. The magnetron 211 maycomprise one or more magnets (e.g., LDR magnets) which may be eitherstationary or movable with respect to the target 205. However, anysuitable type or configuration of magnetron 211 may be utilized.

Electromagnets 224, often referred to as bottom inside magnets (BIM)and/or bottom outside magnets (BOM), are deployed surrounding the regiondirectly over the substrate 101. In an embodiment, the electromagnets224 are also in proximity to the substrate 101, and may be wrappedaround the first coil 213. The electromagnets 224 help to improve theuniformity in the deposition process.

The first power source 207 and the second power source 209 may beoperated independently from each other. Each of the first power source207 and the second power source 209 may be independently powered on andoff without affecting the other. In an embodiment, the connection ofeach of the first power source 207 and the second power source 209 maybe switched in polarity to either cause a deposition on the substrate101, or in another embodiment cause an etching on the substrate 101. Asone skilled in the art will realize, whether the combination of thefirst power source 207 and the second power source 209 performs adeposition function or an etching function is determined by how thepower source is connected, and to which of the target side or the waferside it is connected to. For example, for a deposition process the firstpower source 207 and the second power source 209 may set up a biasfunction to direct sputtered species to deposit over the substrate 101,while for an etching process the bias function is utilized to directions to resputter or etch the substrate 101.

In an embodiment, a DC power source is connected to the target 205, anda RF power source is connected to the substrate 101. In anotherembodiment, the RF power source may be connected to the target 205,while the DC power source may be connected to the substrate 101. Thefirst power source 207 and the second power source 209 may also bereplaced by other power sources for bias sputter, magnetron sputter, ionmetal plasma (IMP) sputter, and the like, and may be connected indifferent combinations. For the purpose of simplifying the followingdiscussions, the first power source 207 is referred to as a DC powersource, and the second power source 209 is referred to as a RF powersource. Further, it is assumed the DC power source has its negative endconnected to the target 205 and hence the second power source 209performs the deposition function.

The first coil 213 is positioned to be wrapped around a first region ofthe deposition chamber 201 directly over where the substrate 101 (and,hence, the first opening 113) will be placed when it is located on themounting platform 203. In an embodiment the first coil 213 is utilizedto either generate or help improve the distribution of ions within thedeposition chamber 201 (e.g., the ionization of the tantalum ions, theargon ions, and the nitrogen ions in an embodiment in which tantalumnitride is being deposited).

The first coil 213 may be formed of a material that is the same as thetarget 205. As such, in an embodiment in which the target 205 istantalum, the first coil 213 may also be tantalum. However, any suitablematerial may be utilized for the first coil 213.

In an embodiment the first coil 213 comprises a ring-type electromagnetin which a plurality of turns of a single conductive wire extend aroundthe outside of the deposition chamber 201. For example, in oneembodiment the first coil 213 comprises a number of turns between about2 turns and about 300, such as about 198 turns. Additionally, the firstcoil 213 may have a first diameter (around the interior or exterior ofthe housing 226) between about 100 nm and about 600 mm, such as about350 mm. However, any suitable number of turns and any suitabledimensions may be utilized.

To generate a desired first electromagnetic field 223 within thedeposition chamber 201, the first coil 213 is connected to a third powersource 221. In an embodiment the third power source 221 is an RF powersource that can apply an RF power of between about 1 MHz and about 40MHz, such as about 2 MHz. However, any suitable power source may beutilized.

When the third power source 221 applies power to the first coil 213 asthe first coil 213 extends around the deposition chamber 201, the firstcoil 213 will generate the first electromagnetic field 223 within thedeposition chamber 201. In an embodiment the application of power fromthe third power source 221 to the first coil 213 may generate the firstelectromagnetic field 223 within the deposition chamber 201.

Additionally, because the first electromagnetic field 223 can adjust anionization area within the deposition chamber 201, the firstelectromagnetic field 223 can also affect the off angle deposition(e.g., the deposition of the material at an angle that is not normal tothe target) of the material that is being deposited onto the substrate101 (e.g., tantalum nitride). As such, by adjusting the firstelectromagnetic field 223, the off angle deposition may also be adjustedand, as such, a more conformal coverage of the deposition may beobtained.

FIG. 2B illustrates an embodiment of a control unit 233 that may beutilized to control the deposition system 200 and, in other embodimentsdescribed further below with respect to FIGS. 7A-8B, an atomic layerdeposition system 700. The control unit 233 may be any form of computerprocessor that can be used in an industrial setting for controllingprocess machines. In an embodiment the control unit 233 may comprise aprocessing unit 202, such as a desktop computer, a workstation, a laptopcomputer, or a dedicated unit customized for a particular application.The control unit 233 may be equipped with a display 204 and one or moreinput/output components 222, such as instruction outputs, sensor inputs,a mouse, a keyboard, printer, combinations of these, or the like. Theprocessing unit 202 may include a central processing unit (CPU) 206,memory 208, a mass storage device 210, a video adapter 214, and an I/Ointerface 231 connected to a bus 212.

The bus 212 may be one or more of any type of several bus architecturesincluding a memory bus or memory controller, a peripheral bus, or videobus. The CPU 206 may comprise any type of electronic data processor, andthe memory 208 may comprise any type of system memory, such as staticrandom access memory (SRAM), dynamic random access memory (DRAM), orread-only memory (ROM). The mass storage device 210 may comprise anytype of storage device configured to store data, programs, and otherinformation and to make the data, programs, and other informationaccessible via the bus 212. The mass storage device 210 may comprise,for example, one or more of a hard disk drive, a magnetic disk drive, oran optical disk drive.

The video adapter 214 and the I/O interface 231 provide interfaces tocouple external input and output devices to the processing unit 202. Asillustrated in FIG. 2B, examples of input and output devices include thedisplay 204 coupled to the video adapter 214 and the I/O component 222,such as a mouse, keyboard, printer, and the like, coupled to the I/Ointerface 231. Other devices may be coupled to the processing unit 202,and additional or fewer interface cards may be utilized. For example, aserial interface card (not shown) may be used to provide a serialinterface for a printer. The processing unit 202 also may include anetwork interface 218 that may be a wired link to a local area network(LAN) or a wide area network (WAN) 220 and/or a wireless link.

It should be noted that the control unit 233 may include othercomponents. For example, the control unit 233 may include powersupplies, cables, a motherboard, removable storage media, cases, and thelike. These other components, although not shown in FIG. 2B, areconsidered part of the control unit 233.

FIG. 2A additionally helps to illustrate one embodiment in which thefirst coil 213 can be used to modify the first electromagnetic field223. In this embodiment the first coil 213 is initially located a firstseparation distance D_(S1) away from the mounting platform 203.Additionally, in order to adjust the position of the first coil 213, afirst motor 225 may be attached to the first coil 213 in order to adjustthe position of the first coil 213 relative to the mounting platform 203(with or without moving the mounting platform 203) and, hence thesubstrate 101 located on the mounting platform 203. In an embodiment thefirst motor 225 comprises a piezoelectric motor or a linear motor,although the first motor 225 may also comprise other types of motors.The first motor 225 may be adapted to adjust a z position of the firstcoil 213, both positively and negatively. However, any suitable methodof adjusting the z position of the first coil 213 may be utilized.

In a particular embodiment the first motor 225 may modify the relativedistance between the first coil 213 and the mounting platform 203 over afirst range of distances. For example, the first motor 225 may move thefirst coil 213 from a position closest to the mounting platform 203 ofabout 0 mm to a position furthest from the mounting platform 203 ofabout 110 mm. However, any suitable range for the first range ofdistances may be utilized.

To initiate the deposition of the barrier layer 301 within the firstopening 113, and as illustrated in FIG. 2A, a first step of thedeposition process includes placing the substrate 101 onto the mountingplatform 203 and within the deposition chamber 201. At that time, thefirst coil 213 is placed at the first separation distance D_(S1) ofbetween about 5 mm and about 500 mm, such as about 20 mm. Additionally,the pressure within the deposition chamber 201 may be set between about0.001 torr and about 0.01 torr, such as about 0.003 torr, while thetemperature of the substrate 101 may be set between about roomtemperature and about 450° C., such as about 300° C.

The first power source 207 (connected to the target 205) may also be setto a power of between about 500 W and about 40,000 W, such as about1,000 W, and the second power source 209 (connected to the substrate101) may be set to a power of between about 2 MHz and about 40 MHz, suchas about 13.56 MHz. Finally, the third power source 221 (connected tothe first coil 213) may also be set to a power of between about 1 MHzand about 40 MHz, such as about 2 MHz. In embodiments in whichadditional precursors, such as the non-target precursor, are utilized, aflow rate of the non-target precursor (e.g., N₂) may be set to bebetween about 0 sccm and about 40 sccm, such as about 15 sccm, while theion source (e.g., argon) may be set to have a flow rate of between about0 sccm and about 50 sccm, such as about 30 sccm. However, any suitableprocess parameters may be utilized for the first stage of deposition.

FIG. 2C illustrates that the first step of the deposition process willdeposit a first layer 227 of the material to be deposited (e.g.,tantalum nitride). The first step of the deposition process may beperformed for a first time period of between about 10 sec and about 1000sec, such as about 100 sec, which can result in a first thickness T₁ ofbetween about 3 {acute over (Å)} and about 40 {acute over (Å)}, such asabout 10 {acute over (Å)}. Additionally, in an embodiment in which thebarrier layer 301 is formed from tantalum nitride, and in which nitrogenis added as a non-target precursor, the first layer 227 of the materialmay be formed to have a first tantalum to nitrogen ratio (Ta/N) ofbetween about 0.3 and about 1, such as about 0.6. However, any suitabletime period, thickness, or composition may be utilized.

FIGS. 3A-3B illustrate that, once the first layer 227 of the material tobe deposited has been formed, a second step of the deposition processmay be performed to form an overall barrier layer 301 (with the firstlayer 227 of the material to be deposited now illustrated using dashedlines). In an embodiment the second step of the deposition processmodifies the first step by adjusting the position of the first coil 213from the first separation distance D_(S1) (utilized in the first stepand illustrated in FIG. 2A) to a second separation distance D_(S2) whilekeeping a remainder of the process parameters the same. By modifying thesecond separation distance D_(S2), the off angle deposition of the ionsand conformality of the deposition may be adjusted. In an embodiment thesecond separation distance D_(S2) may be between about 0 mm and about 11mm, such as about 1 mm, although any suitable separation distance may beutilized.

In an embodiment the adjustment of the position of the first coil 213from the first separation distance D_(S1) to the second separationdistance D_(S2) may be performed during the deposition process andwithout stopping the deposition process. In another embodiment, theadjustment of the position of the first coil 213 from the firstseparation distance D_(S1) to the second separation distance D_(S2) maybe performed during a stoppage of the deposition process, and thedeposition process may be restarted once the adjustment of the positionof the first coil 213 has been completed. Any suitable steps foradjusting the position of the first coil 213 may be utilized.

As illustrated in FIG. 3B, the second step of the deposition processwill form a second layer 303 of the material to be deposited (e.g.,tantalum nitride) over the first layer 227 of the material to bedeposited. In an embodiment the second step of the deposition processmay be continued for a second time period of between about 10 sec andabout 1000 sec, such as about 100 sec, which can result in a secondthickness T₂ of between about 3 {acute over (Å)} and about 40 {acuteover (Å)}, such as about 10 {acute over (Å)}. However, any suitable timeperiod and thickness may be utilized.

Similarly, in an embodiment in which the barrier layer 301 is formedfrom tantalum nitride, and in which nitrogen is added as a non-targetprecursor, by utilizing these parameters in the second step of thedeposition process, the second layer 303 of the material to be depositedmay be formed to have a second tantalum to nitrogen ratio (Ta/N) ofbetween about 0.8 and about 2, such as about 1. This gives the overallbarrier layer 301 (comprising the first layer 227 and the second layer303) a gradient composition of tantalum to nitrogen ratios that rangesfrom between about 0.4 to about 5.

By modifying the separation distance of the first coil 213 relative tothe mounting platform 203, the barrier layer 301 (comprising the firstlayer 227 and the second layer 303) may have an overall improvedquality. In particular, the barrier layer 301 may have an overalltantalum to nitrogen ratio of greater than about 1.3, while stillobtaining a film density of greater than about 13 g/cm³, and having aresistivity of between about 200 μΩ-cm and about 700 μΩ-cm.Additionally, the barrier layer 301 may obtain a conformal coveragewherein a ratio of the thickness of the barrier layer 301 over thesidewalls of the first opening 113 and a thickness of the barrier layer301 over the bottom of the first opening 113 is greater than or equal toabout 0.7. As such, the benefits of utilizing a physical vapordeposition process (a higher tantalum to nitrogen ratio and greater filmdensity) can be achieved while still obtaining a more conformaldeposition.

FIG. 4 illustrates that, once the barrier layer 301 has been formed toline the first opening 113, the first opening 113 is filled with aconductive material to form the interconnect 401. The conductivematerial may comprise copper, although other suitable materials such asaluminum, alloys, doped polysilicon, combinations thereof, and the like,may alternatively be utilized. The conductive material may be formed bydepositing a seed layer (not separately illustrated), electroplatingcopper onto the seed layer, and filling and overfilling the firstopening 113. Once the first opening 113 has been filled, excess portionsof the barrier layer 301, the seed layer, and the conductive materialoutside of the first opening 113 may be removed through a planarizationprocess such as chemical mechanical polishing (CMP), although anysuitable removal process may be used.

FIG. 5A illustrates another embodiment in which the separation distance(e.g., the first separation distance D_(S1) and the second separationdistance D_(S2)) between the mounting platform 203 and the first coil213 may be adjusted. In this embodiment, instead of attaching the firstmotor 225 to the first coil 213 in order to move the first coil 213 inthe z direction, the first motor 225 is, instead, attached to themounting platform 203. As such, while the first coil 213 may remainmotionless, the first motor 225 may be used to adjust the separationdistance by moving the mounting platform 203 to achieve the firstseparation distance D_(S1) and the second separation distance D_(S2),after the deposition process has been initiated. However, any othersuitable method of moving the mounting platform 203 relative to thefirst coil 213 may be utilized.

FIG. 5B illustrates yet another embodiment in which the first motor 225is attached to the mounting platform 203 and a second motor 501 isattached to the first coil 213. In this embodiment the second motor 501may be similar to the first motor 225 (e.g., a piezoelectric motor), andboth the first motor 225 and the second motor 501 may be utilized inconjunction with each other in order to adjust the separation distancebetween the mounting platform and the first coil 213. However, any othersuitable method of moving the mounting platform 203 relative to thefirst coil 213 may be utilized.

FIG. 6 illustrates another embodiment in which the first coil 213remains stationary. In this embodiment, however, instead of adjustingthe first electromagnetic field 223 within the deposition chamber 201 byadjusting the separation distance between the first coil 213 and themounting platform 203, the first electromagnetic field 223 within thedeposition chamber 201 is adjusted by adding additional coils, such as asecond coil 601 and a third coil 603 (each highlighted in FIG. 6 by thedashed boxes), alongside the first coil 213. In this embodiment thesecond coil 601 and the third coil 603 may be similar to the first coil213, such as by being a single conductive line wound around thedeposition chamber 201, but electrically separated from the first coil213. However, in some embodiments the second coil 601 and the third coil603 may be different from the first coil 213.

In an embodiment the first coil 213, the second coil 601, and the thirdcoil 603 are arranged one on top of the other in the z direction of FIG.6. Additionally, the first coil 213, the second coil 601, and the thirdcoil 603 may be spaced apart from each other by a coil distance Dc ofbetween about 2 mm and about 15 mm, such as about 3 mm. However, anysuitable distances may be utilized.

A fourth power source 607 may be attached to the second coil 601 and afifth power source 609 may be attached to the third coil 603. In anembodiment the fourth power source 607 and the fifth power source 609may be similar to the third power source 221 (described above withrespect to FIG. 2A). However, each of the third power source 221, thefourth power source 607, and the fifth power source 609 are independentof each other, and each can apply power to their respective coilsseparately and independently from the others power sources.

In this embodiment, the first layer 227 of the barrier layer 301 may beformed as described above with respect to FIGS. 2A-2C, wherein the firstcoil 213 is located at the first separation distance D_(S1) from themounting platform 203. However, in this embodiment, at this point in thedeposition process power is not applied to the second coil 601 and thethird coil 603. As such, the second coil 601 and the third coil 603 donot actively generate or modify the first electromagnetic field 223within the deposition chamber 201, and the first layer 227 of thebarrier layer 301 is deposited with solely the first coil 213 beingactive.

Once the first layer 227 has been deposited to the desired thickness(e.g., the first thickness T₁), the second layer 303 of the barrierlayer 301 may be deposited using a second step of the deposition processin which the fourth power source 607 applies power to the second coil601, the fifth power source 609 applies power to the third coil 603, orboth the fourth power source 607 and the fifth power source 609 applypower to the second coil 601 and the third coil 603 simultaneously. Forexample, the fourth power source 607 may apply to the second coil 601 apower of between about 0 W and about 8,000 W, such as about 2,000 W,while the fifth power source 609 may be apply to the third coil 603 apower of between about 0 W and about 8,000 W, such as about 2,000 W.While the second coil 601 and the third coil 603 are being used, thefirst coil 213 may either be used (by maintaining power to the firstcoil 213) or else turned off (by removing power from the first coil213). However, any suitable power or combinations of power may beapplied.

By adding the use of the second coil 601 and the third coil 603, thefirst electromagnetic field 223 within the deposition chamber 201 may bemodified during the deposition process. As such, the off angledeposition and ionization area may also be modified in order to create amore conformal deposition process, and the barrier layer 301 (comprisingboth the first layer 227 and the second layer 303) may be formed withthe overall tantalum to nitrogen ratio of greater than about 0.9, whilestill obtaining a film density of greater than about 11 g/cm³.Additionally, the barrier layer 301 may obtain a conformal coveragewherein a ratio of the thickness of the barrier layer 301 over thesidewalls of the first opening 113 and a thickness of the barrier layer301 over the bottom of the first opening 113 is greater than or equal toabout 0.7.

Additionally, while an embodiment is described above which utilizesthree coils (e.g., the first coil 213, the second coil 601, and thethird coil 603), this description is intended to be illustrative and isnot intended to be limiting. Rather, any suitable number of separatecoils, such as between two coils and ten coils, such as two or threecoils, may also be utilized. Any suitable combination of coils may beused and all such combinations are fully intended to be included withinthe scope of the embodiments.

Once the barrier layer 301 is formed utilizing the multiple coils, thefirst opening 113 may be filled as described above with respect to FIG.4 in order to form the interconnect 401. For example, a seed layer maybe deposited and a conductive material may be plated onto the seed layerbefore a chemical mechanical polishing process to remove excess materialof the barrier layer 301, the seed layer and the conductive material.However, any suitable processing may be performed.

FIGS. 7A-7B illustrate another embodiment in which the physical vapordeposition processes described in FIGS. 1-6 are utilized in conjunctionwith another deposition process, such as an atomic layer deposition(ALD) process or chemical vapor deposition (CVD) process, to form thebarrier layer 301. In this embodiment, and as illustrated in FIG. 7B,the substrate 101 and, hence, the first opening 113 may initially beplaced within an ALD deposition system 700 with an ALD depositionchamber 702 on an ALD mounting platform 707. In an embodiment the ALDdeposition chamber 702 and the ALD mounting platform 707 may be similarto the deposition chamber 201 and the mounting platform 203 as describedabove with respect to FIG. 2A, although the ALD deposition chamber 702may not include structure which are specific to the PVD processes, suchas the electromagnets 224, the magnetron 211, or the target 205.

The ALD deposition system 700 also comprises a second precursor deliverysystem 703 and a third precursor delivery system 705 positioned toinject desired precursors (discussed further below) into the ALDdeposition chamber 702. In an embodiment the second precursor deliverysystem 703 and the third precursor delivery system 705 are similar tothe first precursor delivery system 215, such as by comprising a gassupply 217 and a flow controller 219. However, any suitable componentsmay be utilized.

The formation of the third layer 701 may be initiated by putting asecond precursor material into the second precursor delivery system 703.For example, in an embodiment in which the third layer 701 is tantalumnitride, the second precursor material may be a precursor such as(tert-butylimido)tris(diethylamido) tantalum (TBTDET) and may be placedinto the second precursor delivery system 703. However, as one ofordinary skill in the art will recognize, this precursor is not the onlyprecursor that may be utilized to form a layer of tantalum nitride, andthe use of TBTDET is not intended to be limiting to the embodiments. Anysuitable precursor material in any suitable phase (solid, liquid, orgas) to form a layer of tantalum nitride, such as PDMAT or TAIMATA, orany other precursor that may be used to form alternative layers, may beutilized.

Additionally, a third precursor material may be placed into the thirdprecursor delivery system 705. In the embodiment in which a layer oftantalum nitride is the desired material for the third layer 701 of thebarrier layer 301, the third precursor material may be a precursormaterial that may contain nitrogen in order to react with the secondprecursor material to form a monolayer of tantalum nitride. For example,in the embodiment in which TBTDET is utilized as the second precursormaterial, ammonia (NH₃) may be used as the third precursor material andmay be placed into the third precursor delivery system 705. However, thedescription of ammonia as the third precursor material is not intendedto be limiting to the embodiments, and any other suitable precursormaterial, such as N₂H₄, combinations of these, or the like, may also beutilized as the third precursor material.

Once the second precursor material and the third precursor material havebeen placed into the second precursor delivery system 703 and the thirdprecursor delivery system 705, respectively, the formation of the thirdlayer 701 may be initiated by the control unit 233 sending aninstruction to connect the second precursor delivery system 703 to theALD deposition chamber 702. Once connected, the second precursordelivery system 703 can deliver the second precursor material (e.g., theTBTDET) to the ALD deposition chamber 702, wherein the second precursormaterial can be adsorbed and react to the exposed surfaces of the firstdielectric layer 111.

As the second precursor material is adsorbed onto the first dielectriclayer 111, the second precursor material will react with open activesites located on the exposed surfaces of the first dielectric layer 111.However, once all of the open active sites on the first dielectric layer111 have reacted with the second precursor material, the reaction willstop, as there are no more open active sites to which the secondprecursor material will bond. This limitation causes the reaction of thesecond precursor material with the first dielectric layer 111 to beself-limiting and to form a monolayer of the reacted second precursormaterial on the surface of the first dielectric layer 111, therebyallowing for a more precise control of the thickness of the third layer701.

After the self-limiting reaction on the first dielectric layer 111 hasfinished, the ALD deposition chamber 702 may be purged of the secondprecursor material. For example, the control unit 233 may disconnect thesecond precursor delivery system 703 (containing the second precursormaterial to be purged from the ALD deposition chamber 702) and toconnect a purge gas delivery system (not separately illustrated) todeliver a purge gas to the ALD deposition chamber 702. In an embodimentthe purge gas delivery system may be a gaseous tank or other facilitythat provides a purge gas such as nitrogen, argon, xenon, or othernon-reactive gas to the ALD deposition chamber 702. Additionally, thecontrol unit 233 may also initiate a vacuum pump in order to apply apressure differential to the ALD deposition chamber 702 to aid in theremoval of the second precursor material. The purge gas, along with thevacuum pump, may purge the second precursor material from the ALDdeposition chamber 702 for about 3 seconds.

After the purge of the second precursor material has been completed, theintroduction of the third precursor material (e.g., ammonia) to the ALDdeposition chamber 702 may be initiated by the control unit 233disconnecting the purge gas delivery system and connecting the thirdprecursor delivery system 705 (containing the third precursor material)to the ALD deposition chamber 702. Once connected, the third precursordelivery system 705 can deliver the third precursor material to the ALDdeposition chamber 702, wherein the third precursor material can beadsorbed on the surfaces of the first dielectric layer 111 and reactwith the second precursor material in another self-limiting reaction toform a monolayer of the desired material, e.g., tantalum nitride, on thesurface of the first dielectric layer 111.

After the monolayer of the desired material, e.g., tantalum nitride, hasbeen formed, the ALD deposition chamber 702 may be purged (leavingbehind the monolayer of the desired material on the first dielectriclayer 111) using, e.g., a purge gas from the purge gas delivery systemfor about three seconds. After the ALD deposition chamber 702 has beenpurged, a first cycle for the formation of the desired material has beencompleted, and a second cycle similar to the first cycle may be started.For example, the repeated cycle may introduce the second precursormaterial, purge with the purge gas, pulse with the third precursormaterial, and purge with the purge gas. These cycles may be repeateduntil the third layer 701 has the desired thickness.

However, as one of ordinary skill in the art will recognize, the abovedescribed process to form the third layer 701 is intended to beillustrative and is not intended to be limiting to the embodiments. Anyother suitable process, such as initially pulsing the third precursormaterial (e.g., ammonia), purging with the purge gas, introducing thesecond precursor material (e.g., TBTDET), and purging with the purge gasto complete a first cycle and then repeating the first cycle, may alsobe utilized. This and any other suitable process to form the third layer701 are fully intended to be included within the scope of theembodiments.

FIGS. 8A-8B illustrate that, once the third layer 701 of the barrierlayer 301 has been formed, the substrate 101 may be placed into thedeposition system 200 in order to form the first layer 227 of thebarrier layer 301 and the second layer 303 of the barrier layer 301 overthe third layer 701. In an embodiment the first layer 227 of the barrierlayer 301 and the second layer 303 of the barrier layer 301 may beformed as described in any of the embodiments discussed above withrespect to FIGS. 1-6. For example, the first layer 227 of the barrierlayer 301 may be formed with the first coil 213 located at the firstseparation distance D_(S1) and the second layer 303 of the barrier layer301 may be formed after the first coil 213 has been moved to the secondseparation distance D_(S2). However, any suitable method of forming thefirst layer 227 of the barrier layer 301 and the second layer 303 of thebarrier layer 301 may be utilized.

FIG. 8A also illustrates that, once the barrier layer 301 has beenformed with the third layer 701, the remainder of the first opening 113may be filled as described above with respect to FIG. 4 in order to formthe interconnect 401. For example, a seed layer may be deposited and aconductive material may be plated onto the seed layer before a chemicalmechanical polishing process to remove excess material of the barrierlayer 301, the seed layer and the conductive material. However, anysuitable processing may be performed.

Additionally, while the embodiment discussed in FIGS. 7A-8B is describedas forming the third layer 701 first, this is intended to beillustrative and is not intended to be limiting. Rather, in otherembodiments the first layer 227 of the barrier layer 301 and the secondlayer 303 of the barrier layer 301 may be formed prior to formation ofthe third layer 701. Further, if desired, the third layer 701 may beformed in a single cluster tool without breaking atmosphere or else maybe performed in separate machines than the first layer 227 of thebarrier layer 301 and the second layer 303 of the barrier layer 301.This and all other suitable combinations are fully intended to beincluded within the scope of the embodiments.

By modifying the combination of deposition processes along withmodifying the first electromagnetic field 223, the barrier layer 301(comprising the first layer 227, the second layer 303, and the thirdlayer 701) may have an overall improved quality. In particular, thebarrier layer 301 may have an overall tantalum to nitrogen ratio ofgreater than about 0.9, while still obtaining a film density of greaterthan about 11 g/cm³. Additionally, the barrier layer 301 may obtain aconformal coverage wherein a ratio of the thickness of the barrier layer301 over the sidewalls of the first opening 113 and a thickness of thebarrier layer 301 over the bottom of the first opening 113 is greaterthan or equal to about 0.7. As such, the benefits of utilizing aphysical vapor deposition process (a higher tantalum to nitrogen ratioand greater film density) can be achieved while still obtaining a moreconformal deposition.

Additionally, the more conformal deposition also helps to reduce oreliminate overhangs, insufficient sidewall coverage, or thickerdepositions at the bottom of the vias while still avoiding the lowdensity, nitrogen rich, high resistivity that normally comes with a pureALD process. As such, the properties that can be achieved with PVD canbe maintained while still achieving an ALD-like coverage. This allowsfor a larger process window (due to less overhang) and an overall bettertreatment efficiency.

In an embodiment, a method of manufacturing a semiconductor deviceincludes sputtering in a first chamber a first portion of a barriermaterial onto a substrate on a mounting platform, wherein during thesputtering the first portion of the barrier material a first coil issituated a first distance away from the mounting platform, the mountingplatform being located at a first location; and sputtering in the firstchamber a second portion of the barrier material onto the substrate,wherein during the sputtering the second portion of the barrier materialthe first coil is situated a second distance away from the mountingplatform, the second distance being different from the first distance,the mounting platform being located at the first location. In anembodiment the sputtering the second portion of the barrier materialfurther comprises moving the first coil without moving the mountingplatform. In an embodiment the sputtering the second portion of thebarrier material further comprises moving the mounting platform withoutmoving the first coil. In an embodiment the method further includes,prior to the sputtering the first portion of the barrier material,depositing an atomic layer deposition portion of the barrier material,wherein the depositing the atomic layer deposition portion is performedat least in part with an atomic layer deposition process. In anembodiment the first portion of the barrier material and the secondportion of the barrier material collectively have a tantalum to nitrogenratio of greater than 0.9. In an embodiment the first portion of thebarrier material and the second portion of the barrier materialcollectively have a ratio between a sidewall thickness and a bottomthickness of greater than or equal to 0.7. In an embodiment the firstportion of the barrier material and the second portion of the barriermaterial collectively have a density of greater than 11 g/cm³.

In another embodiment a method of manufacturing a semiconductor deviceincludes applying a first power to a first coil; during the applying thefirst power to the first coil, sputtering a first portion of a barriermaterial onto a substrate; after the sputtering the first portion of thebarrier material, applying a second power to a second coil separate fromthe first coil; and during the applying the second power to the secondcoil, sputtering a second portion of the barrier material onto thesubstrate. In an embodiment the method further includes, after thesputtering the first portion of the barrier material, applying a thirdpower to a third coil separate from the first coil and the second coil;and during the applying the second power to the second coil and duringthe applying the third power to the third coil, sputtering the secondportion of the barrier material onto the substrate. In an embodiment themethod further includes, prior to applying the first power to the firstcoil, depositing a first atomic layer deposition portion of the barriermaterial onto the substrate, the depositing the first atomic layerdeposition portion being performed at least in part using an atomiclayer deposition process. In an embodiment the first portion of thebarrier material and the second portion of the barrier materialcollectively have a density of greater than about 11 g/cm³. In anembodiment the barrier material is tantalum nitride. In an embodimentthe first portion of the barrier material and the second portion of thebarrier material collectively have a tantalum to nitrogen ratio ofgreater than 0.9. In an embodiment the first portion of the barriermaterial and the second portion of the barrier material collectivelyhave a thickness ratio of greater than or equal to 0.7.

In yet another embodiment a deposition system includes a firstdeposition chamber; a target region within the first deposition chamber;a mounting platform within the first deposition chamber opposite thetarget region, a first region located between the target region and themounting platform; a first coil surrounding the first region; and afirst motor attached to the first coil, wherein the first motor ispositioned to adjust a distance between the first coil and the mountingplatform. In an embodiment the deposition system further includes atarget within the target region. In an embodiment the target comprises afirst material and the first coil comprises the first material. In anembodiment the deposition system further includes a second motorattached to the mounting platform. In an embodiment the depositionsystem further includes a nitrogen-containing precursor input to thefirst deposition chamber. In an embodiment the deposition system furtherincludes a first atomic layer deposition precursor input to a seconddeposition chamber; and a second atomic layer deposition precursor inputto the second deposition chamber.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A deposition system comprising: a firstdeposition chamber; a target within the first deposition chamber; amounting platform within the first deposition chamber; a first coilwithin the first deposition chamber; a first power source connected tothe first coil; a second coil within the first deposition chamber; asecond power source connected to the second coil; a third coil withinthe first deposition chamber; and a third power source connected to thethird coil, wherein the first power source, the second power source andthe third power source are each different.
 2. The deposition system ofclaim 1, further comprising a first precursor delivery system connectedto the first deposition chamber, and a first ion delivery systemconnected to the first deposition chamber.
 3. The deposition system ofclaim 2, further comprising a second deposition chamber, the seconddeposition chamber connected to a second precursor delivery system, thesecond deposition chamber being an atomic layer deposition chamber. 4.The deposition system of claim 3, further comprising a third precursordelivery system connected to the second deposition chamber, the thirdprecursor delivery system being different from the second precursordelivery system.
 5. The deposition system of claim 1, wherein the targetcomprises tantalum.
 6. The deposition system of claim 1, wherein thefirst power source is a radio-frequency power source with a first powerbetween about 1 MHz and about 40 MHz.
 7. The deposition system of claim1, further comprising a direct current power source connected to thetarget.
 8. A deposition system comprising: a deposition chamber; atarget within the deposition chamber; a first coil within the depositionchamber; a mounting platform within the deposition chamber; a first coillocation; and a second coil location, the second coil location beingdifferent from the first coil location, wherein the first coil ismovable between the first coil location and the second coil location. 9.The deposition system of claim 8, further comprising a first motorconnected to the first coil.
 10. The deposition system of claim 9,further comprising a first mounting platform location and a secondmounting platform location, wherein the mounting platform is movablebetween the first mounting platform location and the second mountingplatform location.
 11. The deposition system of claim 10, furthercomprising a second motor connected to the mounting platform.
 12. Thedeposition system of claim 8, further comprising a direct current powersource connected to the target.
 13. The deposition system of claim 8,further comprising a radio-frequency power source connected to thetarget.
 14. The deposition system of claim 8, wherein the first coil andthe target comprise a same material.
 15. A deposition system comprising:a first deposition chamber; a target region within the first depositionchamber; a mounting platform within the first deposition chamberopposite the target region, a first region located between the targetregion and the mounting platform; a first coil surrounding the firstregion; and a first motor attached to the first coil, wherein the firstmotor is positioned to adjust a distance between the first coil and themounting platform.
 16. The deposition system of claim 15, furthercomprising a target within the target region.
 17. The deposition systemof claim 16, wherein the target comprises a first material and the firstcoil comprises the first material.
 18. The deposition system of claim15, further comprising a second motor attached to the mounting platform.19. The deposition system of claim 15, further comprising anitrogen-containing precursor input to the first deposition chamber. 20.The deposition system of claim 19, further comprising: a first atomiclayer deposition precursor input to a second deposition chamber; and asecond atomic layer deposition precursor input to the second depositionchamber.